Molecular arrangement of copper phthalocyanine on hydrogen‐terminated Si(111): Influence of surface roughness
Molecular arrangement of copper phthalocyanine on hydrogen‐terminated Si(111): Influence of surface roughness
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氢封端 Si(111) 上铜酞菁的分子排列：表面粗糙度的影响
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
H. Tokumoto
中科院分区：
文献类型：
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作者：
M. Nakamura;Y. Morita;Y. Mori;A. Ishitani;H. Tokumoto
利用扫描探针显微镜和x射线衍射研究了酞菁铜（CuPc）晶体在氢端Si（111）表面的分子排列，以及表面粗糙度的影响。在均方根粗糙度为0.20 nm的粗糙表面上，分子堆叠形成分子柱平行于表面的α晶体。另一方面，在原子平面上生长了一种新的晶体形式，其柱完全垂直于Si（111）平面。在这种情况下，分子垂直于衬底堆叠，底层分子位于正下方。在60 ~ 180℃范围内，这些分子排列与生长温度无关。在原子平面上，表面与平面CuPc分子之间的强相互作用力可能导致新的生长行为。
The molecular arrangement of copper phthalocyanine (CuPc) crystals on hydrogen‐terminated Si(111) surfaces was investigated by using both scanning probe microscopy and x‐ray diffraction in terms of influence of the surface roughness. On a rough surface with a root‐mean‐square roughness of 0.20 nm, the molecules were stacked so as to form an α crystal where the molecular column was parallel to the surface. On the other hand, a new crystal form with its column exactly perpendicular to the Si(111) plane was grown on a atomically flat surface. In this case, the molecules were stacked perpendicular to the substrate with the underlying molecules situated directly below. These molecular arrangements were independent of the growth temperature in the range of 60–180 °C. On the atomically flat surfaces, the strong interactive force between the surface and the planar CuPc molecule may result in the new growth behavior.