Compact laser molecular beam epitaxy system using laser heating of substrate for oxide film growth
Compact laser molecular beam epitaxy system using laser heating of substrate for oxide film growth
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DOI：
10.1063/1.1149562
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发表时间：
1999-01-01
影响因子：
1.6
通讯作者：
Kawasaki, M
中科院分区：
文献类型：
--
作者：
Ohashi, S;Lippmaa, M;Kawasaki, M
研制了一种高温、氧兼容、小型化的激光分子束外延（laser MBE）系统。利用连续波掺钕钇铝石榴石（Nd：YAG）激光器发出的1.06 μ m红外光，实现了在1000 ~ 1000 ℃真空和高达1个大气压氧压下对衬底温度的宽范围快速控制。最高可用温度被镍样品保持器的熔点限制在1453 ℃。据我们所知，这是脉冲激光沉积氧化物薄膜的最高温度。高效率的激光加热结合温度监测的高温计和反馈控制的Nd：YAG激光功率的个人计算机，使它能够准确地调节基板温度，并实现高的样品加热和冷却速率。氧分压和烧蚀激光触发也由计算机控制。准确的生长参数控制相结合，实时原位表面结构监测反射高能电子衍射研究氧化物薄膜生长的详细在很宽的温度范围内，氧分压，和沉积速率。我们已经证明了该系统的性能，通过制造同质外延SrTiO 3薄膜以及异质外延Sr 2 RuO 4和SrRuO 3薄膜SrTiO 3衬底上的温度高达1300摄氏度。该温度足以将薄膜生长模式从逐层生长转变为阶梯流动。(C)1999年美国物理学会。[S0034-6748（99）03301-8]。
A high-temperature, oxygen compatible, and compact laser molecular beam epitaxy (laser MBE) system has been developed. The 1.06 mu m infrared light from a continuous wave neodymium-doped yttrium aluminum garnet (Nd: YAG) laser was used to achieve a wide range and rapid control of substrate temperature in ultrahigh vacuum and at up to 1 atm oxygen pressure. The maximum usable temperature was limited to 1453 degrees C by the melting point of the nickel sample holder. To our knowledge, this is the highest temperature reported for pulsed laser deposition of oxide films. The efficient laser heating combined with temperature monitoring by a pyrometer and feedback control of the Nd: YAG laser power by a personal computer made it possible to regulate the substrate temperature accurately and to achieve high sample heating and cooling rates. The oxygen pressure and ablation laser triggering were also controlled by the computer. The accurate growth parameter control was combined with real-time in situ surface structure monitoring by reflection high energy electron diffraction to investigate oxide thin film growth in detail over a wide range of temperatures, oxygen partial pressures, and deposition rates. We have demonstrated the performance of this system by the fabrication of homoepitaxial SrTiO3 films as well as heteroepitaxial Sr2RuO4, and SrRuO3 films on SrTiO3 substrates at temperatures of up to 1300 degrees C. This temperature was high enough to change the film growth mode from layer by layer to step flow. (C) 1999 American Institute of Physics. [S0034-6748(99)03301-8].