Temperature dependence of carrier lifetimes in InN
Temperature dependence of carrier lifetimes in InN
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DOI：
10.1002/pssa.200461501
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发表时间：
2005-04-01
影响因子：
2
通讯作者：
Schaff, WJ
中科院分区：
文献类型：
--
作者：
Chen, F;Cartwright, AN;Schaff, WJ
时间分辨泵浦-探测透射测量被用来确定非故意掺杂水平从10（18）到10（19）cm（-3）的InN外延层的载流子寿命的温度依赖性。在20 K下观察到的衰减时间很好地解释了占主导地位的辐射带间复合，而在室温下，它是由于一个缺陷相关的非辐射复合通道。通过测量微分透射衰减时间和光致发光强度，推导出辐射寿命的温度依赖性。对于质量最好的样品，我们发现辐射寿命与T-3/2成比例地增加，正如理论预测的那样，当k-选择规则成立时，这表明辐射带间跃迁解释了整个温度下观察到的红外光致发光。(c)2005 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆。
Time-resolved pump-probe transmission measurements were used to determine the temperature dependence of carrier lifetime for InN epilayers with unintentionally doped levels from 10(18) to 10(19) cm(-3). The observed decay time at 20 K is well explained by a dominating radiative interband recombination, while at room temperature it is attributed to a defect related nonradiative recombination channel. The temperature dependence of the radiative lifetime is deduced from the measurements of both differential transmission decay time and PL intensity. For the best quality sample, we find the radiative lifetime increases proportionally to T-3/2, as theory predicts when a k-selection rule holds, which suggests that the radiative band-to-band transition accounts for the observed infrared photoluminescence over the entire temperature. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.