Formation of epitaxial Tl2Ba2CaCu2O8 thin films at low temperature in pure argon
Formation of epitaxial Tl2Ba2CaCu2O8 thin films at low temperature in pure argon
复制标题
DOI：
10.1063/1.110805
复制
发表时间：
1993-09
影响因子：
4
通讯作者：
Shi‐Ping Yan;L. Fang;Q. Song;J. Yan;Yingtao Zhu;J. Chen;Shuanggen Zhang
中科院分区：
文献类型：
--
作者：
Shi‐Ping Yan;L. Fang;Q. Song;J. Yan;Yingtao Zhu;J. Chen;Shuanggen Zhang
Mirror‐like Tl2Ba2CaCu2O8 thin films have been reproducibly prepared on (001)LaAlO3 substrates by dc magnetron sputtering using 80% argon and 20% oxygen and post‐annealing at temperatures of 720–760 °C in 1 atm pure argon. X‐ray diffraction patterns of θ‐2θ scans, φ scans, and Read camera photographs prove that the thin films are strongly textured with the c‐axis perpendicular to the substrate surfaces and epitaxially grown to the substrate with Tl2Ba2CaCu2O8(100) parallel to the LaAlO3(100). The zero resistance temperatures are in the range of 105.2–108.6 K for the 0.2–1.0‐μm‐thick films. The critical current density of 5.3×106 A/cm2 at 77 K has been obtained at zero magnetic field for a 0.4‐μm‐thick film.
