Mobility in excess of 106 cm2/V s in InAs quantum wells grown on lattice mismatched InP substrates
Mobility in excess of 106 cm2/V s in InAs quantum wells grown on lattice mismatched InP substrates
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DOI：
10.1063/1.4993784
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发表时间：
2017-10-02
影响因子：
4
通讯作者：
Manfra, M. J.
中科院分区：
文献类型：
--
作者：
Hatke, A. T.;Wang, T.;Manfra, M. J.
本文研究了In0.75Ga0.25As/InAs/In0.75Ga0.25As复合量子阱中二维电子气体的输运性质，该量子阱包覆有In0.75Al0.25As势垒，在绝缘InP衬底上变质生长。通过优化In0.75Ga0.25As层、In0.75Al0.25As势垒和InAs量子阱的宽度，我们证明了迁移率超过1 x 10(6) cm(2)/V s。迁移率与密度的数据表明，散射主要是由带电杂质的残余三维分布决定的。我们提取了这些复合量子阱的有效Rashba参数和自旋轨道长度。AIP出版社出版。
We investigate the transport properties of a two-dimensional electron gas residing in strained composite quantum wells of In0.75Ga0.25As/InAs/In0.75Ga0.25As cladded with In0.75Al0.25As barriers grown metamorphically on insulating InP substrates. By optimizing the widths of the In0.75Ga0.25As layers, the In0.75Al0.25As barrier, and the InAs quantum well, we demonstrate mobility in excess of 1 x 10(6) cm(2)/V s. Mobility vs. density data indicate that scattering is dominated by a residual three dimensional distribution of charged impurities. We extract the effective Rashba parameter and spin-orbit length for these composite quantum wells. Published by AIP Publishing.