High-density polyethylene—an inert additive with stabilizing effects on organic field-effect transistors
High-density polyethylene—an inert additive with stabilizing effects on organic field-effect transistors
复制标题
高密度聚乙烯——一种对有机场效应晶体管具有稳定作用的惰性添加剂
DOI：
10.1039/d0tc03173a
复制
发表时间：
2020
影响因子：
6.4
通讯作者：
Stingelin, Natalie
中科院分区：
文献类型：
--
作者：
Scaccabarozzi, Alberto D.;Basham, James I.;Yu, Liyang;Westacott, Paul;Zhang, Weimin;Amassian, Aram;McCulloch, Iain;Caironi, Mario;Gundlach, David J.;Stingelin, Natalie
在过去的几十年里，有机电子技术已经引起了人们的极大兴趣，并且已经成为传统无机平台在特定应用中的有希望的替代品。然而，为了充分利用塑料电子的潜力，除了电子功能之外，还需要满足其他先决条件，包括良好的机械稳定性，易于加工和高设备可靠性。克服这些问题的一种可能的方法是使用绝缘：半导体聚合物共混物，它已被证明具有良好的流变学和机械性能，通常由绝缘组件提供，而不会对半导体的光电性能产生负面影响。在这里，我们证明了由半晶高密度聚乙烯（HDPE）与空穴和电子传输有机半导体相结合的二元共混物可以制造出显著提高器件稳定性的p型和n型薄膜晶体管，在某些情况下，还可以提高器件性能。例如，我们观察到，当与HDPE共混时，用空穴输运的二酮吡咯聚合物衍生物制成的器件的亚阈值斜率显著降低，偏置应力效应显著降低，并且在HDPE与电子输运的聚[N，N ' -双（2-辛基十二烷基）-萘-1,4,5,8-双（二碳酰亚胺）2,6-二基]-盐-5,5 ' -（2,2 ' -双噻吩）}，即P（NDI2OD-T2）共混制成的晶体管中，电荷载流子迁移率和货架寿命显著提高。也被称为N2200，与整齐的材料相比，突出了半导体物种与半晶体商品聚合物混合可以具有的广泛，多用途的好处。
Organic electronics technologies have attracted considerable interest over the last few decades and have become promising alternatives to conventional, inorganic platforms for specific applications. To fully exploit the touted potential of plastic electronics, however, other prerequisites than only electronic functions need to be fulfiled, including good mechanical stability, ease of processing and high device reliability. A possible method to overcome these issues is the employment of insulating:semiconducting polymer blends, which have been demonstrated to display favourable rheological and mechanical properties, generally provided by the insulating component, without negatively affecting the optoelectronic performance of the semiconductor. Here, we demonstrate that binary blends comprising the semicrystalline high-density polyethylene (HDPE) in combination with hole- and electron-transporting organic semiconductors allow fabrication of p-type and n-type thin-film transistors of notably improved device stability and, in some scenarios, improved device performance. We observe, for example, considerably lower subthreshold slopes and drastically reduced bias-stress effects in devices fabricated with a hole-transporting diketopyrrolopyrrole polymer derivative when blended with HDPE and significantly enhanced charge-carrier mobilities and shelf life in case of transistors made with blends between HDPE and the electron-transporting poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)2,6-diyl]-alt-5,5′-(2,2′-bithiophene)}, i.e. P(NDI2OD-T2), also known as N2200, compared to the neat material, highlighting the broad, versatile benefits blending semiconducting species with a semicrystalline commodity polymer can have.
影响因子：
29.4
作者：
Loewe, RS;Khersonsky, SM;McCullough, RD
通讯作者：
McCullough, RD