Realizing the heteromorphic superlattice: Repeated heterolayers of amorphous insulator and polycrystalline semiconductor with minimal interface defects
Realizing the heteromorphic superlattice: Repeated heterolayers of amorphous insulator and polycrystalline semiconductor with minimal interface defects
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实现异形超晶格：具有最小界面缺陷的非晶绝缘体和多晶半导体的重复异质层
DOI：
10.1002/adma.202207927
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发表时间：
2023
影响因子：
29.4
通讯作者：
Medvedeva, Julia
中科院分区：
文献类型：
--
作者：
Lee, Woongkyu;Chen, Xianyu;Shao, Qing;Baik, Sung‐Il;Kim, Sungkyu;Seidman, David;Bedzyk, Michael;Dravid, Vinayak;Ketterson, John B.;Medvedeva, Julia
实现了一种非常规的“异形”超晶格（HSL），由具有不同形态的不同材料的重复层组成：半导体pc-In2O3层与绝缘a-MoO3层交错。 Tsu 最初于 1989 年提出，但从未完全实现，这里展示的高质量 HSL 异质结构验证了 Tsu 的直觉，即非晶相中键角的灵活性和界面键处氧化物的钝化效应有助于创建光滑、高迁移率的界面。交替的非晶层可防止多晶层中的应变累积，同时抑制缺陷在 HSL 上的传播。对于层厚为 7:7 nm 的 HSL，观察到的电子迁移率为 71 cm2Vs-1，与最高质量的 In2O3 薄膜相匹配。使用从头算分子动力学模拟和混合泛函计算验证了结晶 In2O3/非晶 MoO3 界面的原子结构和电子性质。这项工作将超晶格概念推广到形态组合的全新范式。
An unconventional “heteromorphic” superlattice (HSL) is realized, comprised of repeated layers of different materials with differing morphologies: semiconductingpc‐In2O3layers interleaved with insulatinga‐MoO3layers. Originally proposed by Tsu in 1989, yet never fully realized, the high quality of the HSL heterostructure demonstrated here validates the intuition of Tsu, whereby the flexibility of the bond angle in the amorphous phase and the passivation effect of the oxide at interfacial bonds serve to create smooth, high‐mobility interfaces. The alternating amorphous layers prevent strain accumulation in the polycrystalline layers while suppressing defect propagation across the HSL. For the HSL with 7:7 nm layer thickness, the observed electron mobility of 71 cm2Vs‐1, matches that of the highest quality In2O3thin films. The atomic structure and electronic properties of crystalline In2O3/amorphous MoO3interfaces are verified using ab‐initio molecular dynamics simulations and hybrid functional calculations. This work generalizes the superlattice concept to an entirely new paradigm of morphological combinations.