240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes
240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes
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DOI：
10.1109/lpt.2010.2057503
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发表时间：
2010-07
影响因子：
2.6
通讯作者：
M. Lahrichi;G. Glastre;E. Derouin;D. Carpentier;N. Lagay;J. Decobert;M. Achouche
中科院分区：
文献类型：
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作者：
M. Lahrichi;G. Glastre;E. Derouin;D. Carpentier;N. Lagay;J. Decobert;M. Achouche
我们展示了一个AlInAs-InGaAs分离的吸收，分级，和倍增雪崩光电二极管（APD）与一个非常薄的雪崩层工作在1550 nm的10 Gb/s的光传输，同时实现高响应度（0.9 A/W在M = 1），非常低的过量噪声因子（F（M=10）= 3），和非常高的增益带宽积为240 GHz。据我们所知，这是第一次，背照式平面结AlInAs-InGaAs APD实现这样的性能。
We demonstrate an AlInAs-InGaAs separate absorption, grading, and multiplication avalanche photodiode (APD) with a very thin avalanche layer operating at 1550 nm for 10-Gb/s optical transmission achieving simultaneously high responsivity (0.9 A/W at M = 1), very low excess noise factor (F(M=10) = 3), and very high gain-bandwidth product of 240 GHz. To our knowledge, this is the first time that a back-side illuminated planar junction AlInAs-InGaAs APD achieved such performances.