Stochastic Stress Jumps Due to Soliton Dynamics in Two-Dimensional van der Waals Interfaces
Stochastic Stress Jumps Due to Soliton Dynamics in Two-Dimensional van der Waals Interfaces
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DOI：
10.1021/acs.nanolett.9b04619
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发表时间：
2020-02-01
期刊：
影响因子：
10.8
通讯作者：
van der Zande, Arend M.
中科院分区：
文献类型：
--
作者：
Kim, SunPhil;Annevelink, Emil;van der Zande, Arend M.
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The creation and movement of dislocations determine the nonlinear mechanics of materials. At the nanoscale, the number of dislocations in structures become countable, and even single defects impact material properties. While the impact of solitons on electronic properties is well studied, the impact of solitons on mechanics is less understood. In this study, we construct nanoelectromechanical drumhead resonators from Bernal stacked bilayer graphene and observe stochastic jumps in frequency. Similar frequency jumps occur in few-layer but not twisted bilayer or monolayer graphene. Using atomistic simulations, we show that the measured shifts are a result of changes in stress due to the creation and annihilation of individual solitons. We develop a simple model relating the magnitude of the stress induced by soliton dynamics across length scales, ranging from