Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications
Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications
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DOI：
10.1002/adma.201602645
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发表时间：
2016-10-12
影响因子：
29.4
通讯作者：
Mi, Zetian
中科院分区：
文献类型：
--
作者：
Le, Binh H.;Zhao, Songrui;Mi, Zetian
通过选区外延控制纳米线聚结，在c面蓝宝石衬底上制备了几乎无位错的半极性AlGaN模板。聚结的Mg掺杂AlGaN层表现出上级电荷载流子传输特性。半极性AlGaN紫外发光二极管表现出优异的性能。这项工作建立了使用工程纳米线结构作为一个可行的架构，以实现大面积，无位错平面光子和电子器件。
Nearly dislocation-free semipolar AlGaN templates are achieved on c-plane sapphire substrate through controlled nano wire coalescence by selective-area epitaxy. The coalesced Mg-doped AlGaN layers exhibit superior charge-carrier-transport properties. Semipolar-AlGaN ultraviolet light-emitting diodes demonstrate excellent performance. This work establishes the use of engineered nanowire structures as a viable architecture to achieve large-area, dislocation-free planar photonic and electronic devices.