Photo‐enhanced reactivation of Si donors deactivated by plasma‐induced defects in n‐type GaN
Photo‐enhanced reactivation of Si donors deactivated by plasma‐induced defects in n‐type GaN
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DOI：
10.1002/pssc.200674792
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发表时间：
2007-06
期刊：
影响因子：
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通讯作者：
S. Nakamura;Yuki Ikadai;M. Suda;M. Suhara;T. Okumura
中科院分区：
文献类型：
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作者：
S. Nakamura;Yuki Ikadai;M. Suda;M. Suhara;T. Okumura
通过使用肖特基二极管和紫外照明，研究了等离子体引起的缺陷使 GaN 中的硅施主失活的行为。有趣的是，即使在室温下，对失活的 GaN 进行紫外线照射也会增强施主的再激活。研究发现，随着光照时间的增加，n-GaN 中的施主失活区域向体区域移动。紫外线照射的效果被认为是供体-缺陷复合物的直接光解或作为少数载流子的空穴注入。 （© 2007 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
The behavior of plasma-induced defects deactivating Si donors in GaN has been studied by using Schottky diodes with the UV illumination. It is interesting that the UV irradiating for the deactivated GaN leads to an enhancement of reactivation of the donors even at room temperature. It is found that the donor-deactivated region in n-GaN shifts toward the bulk region with increasing the illumination time. The effect of the UV illumination is thought to be the direct photodissociation of the donor-defect complexes or the injection of holes as a minority carrier. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)