Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface
Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface
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DOI：
10.1103/physrevlett.98.136105
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发表时间：
2007-03-30
影响因子：
8.6
通讯作者：
Tochihara, Hiroshi
中科院分区：
文献类型：
--
作者：
Shirasawa, Tetsuroh;Hayashi, Kenjiro;Tochihara, Hiroshi
6H-SiC(0001) 表面的氢气蚀刻和随后在氮气气氛中的退火导致形成氮氧化硅 (SiON) 外延层。定量低能电子衍射分析表明，SiON 层具有异质双层结构：通过 Si-O-Si 桥键在氮化硅单层上形成硅酸盐单层。晶胞中没有悬空键，这解释了该结构对于暴露在空气中具有鲁棒性。在 SiON 层上测量的扫描隧道光谱显示，类 SiO2 的带隙接近 9 eV。描述了这种新型外延层在器件应用中的巨大潜力。
Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere leads to the formation of a silicon oxynitride (SiON) epitaxial layer. A quantitative low-energy electron diffraction analysis revealed that the SiON layer has a hetero-double-layer structure: a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in the unit cell, which explains the fact that the structure is robust against air exposure. Scanning tunneling spectroscopy measured on the SiON layer shows a bulk SiO2-like band gap of similar to 9 eV. Great potential of this new epitaxial layer for device applications is described.