High-purity cobalt thin films with perpendicular magnetic anisotropy prepared by chemical vapor deposition
High-purity cobalt thin films with perpendicular magnetic anisotropy prepared by chemical vapor deposition
复制标题
化学气相沉积法制备具有垂直磁各向异性的高纯钴薄膜
DOI：
10.7567/apex.8.113005
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发表时间：
2015
影响因子：
2.3
通讯作者：
T. Kondo
中科院分区：
文献类型：
--
作者：
Y. Ootera;T. Shimada;M. Kado;M. Quinsat;H. Morise;Shiho Nakamura;T. Kondo
介绍了高纯钴薄膜的化学气相沉积（CVD）研究。通过热CVD技术制备的具有Pt/Ta底层和Pt帽层的Co层显示出1.8T的饱和磁化强度（Ms）和具有1.105J/m3的各向异性能（Ku）的垂直磁各向异性（PMA）。Ku的钴厚度依赖性表明，在Pt/Co界面的界面各向异性是最有可能的起源所获得的PMA。
A study of the chemical vapor deposition (CVD) of high-purity cobalt thin films is described. The Co layer prepared by a thermal CVD technique with a Pt/Ta underlayer and a Pt cap layer shows a saturation magnetization (Ms) of ∼1.8 T and perpendicular magnetic anisotropy (PMA) with an anisotropy energy (Ku) of ∼105 J/m3. The cobalt thickness dependence of Ku reveals that the interfacial anisotropy at the Pt/Co interface is most likely the origin of the obtained PMA.