Detection of the valence band in buried Co2MnSi-MgO tunnel junctions by means of photoemission spectroscopy
Detection of the valence band in buried Co2MnSi-MgO tunnel junctions by means of photoemission spectroscopy
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DOI：
10.1063/1.2931089
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发表时间：
2008-05-12
影响因子：
4
通讯作者：
Kobayashi, Keisuke
中科院分区：
文献类型：
--
作者：
Fecher, Gerhard H.;Balke, Benjamin;Kobayashi, Keisuke
本文报道了用硬X射线光电子能谱探测埋在地下的Heusler化合物的价带。测量已进行所谓的“半”隧道结，这是薄膜的Co2 MnSi下面的MgO。从衬底开始，样品的结构是MgO（缓冲）-Co2 MnSi-MgO（t（MgO））-AlOx，其中上部MgO层的厚度tMgO为2和20 nm。价带X射线光电子能谱已被约6 keV能量的硬X射线激发。的价带谱已被用来估计的平均自由程的电子通过MgO层为17 nm的动能约为6千电子伏。特别是，它示出的掩埋Co2 MnSi膜表现出相同的价态密度在体样品。(c)2008年美国物理学会。
This work reports on the detection of the valence band of buried Heusler compounds by means of hard x-ray photoemission spectroscopy. The measurements have been performed on the so-called "half" tunnel junctions that are thin films of Co2MnSi underneath MgO. Starting from the substrate, the structure of the samples is MgO(buffer)-Co2MnSi-MgO(t(MgO))-AlOx with a thickness tMgO of the upper MgO layer of 2 and 20 nm. The valence band x-ray photoemission spectra have been excited by hard x rays of about 6 keV energy. The valence band spectra have been used to estimate the mean free path of the electrons through the MgO layer to be 17 nm at kinetic energies of about 6 keV. In particular, it is shown that the buried Co2MnSi films exhibit the same valence density of states as in bulk samples. (c) 2008 American Institute of Physics.