Dose-rate dependence of damage buildup in 3C-SiC
Dose-rate dependence of damage buildup in 3C-SiC
复制标题
3C-SiC 中损伤累积的剂量率依赖性
DOI：
10.1063/1.4986631
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发表时间：
2017
影响因子：
3.2
通讯作者：
S. Kucheyev
中科院分区：
文献类型：
--
作者：
L. B. B. Aji;Tian T Li;J. Wallace;S. Kucheyev
在SiC的辐射损伤过程中的缺陷产生率的影响仍然知之甚少。在这里，我们使用离子沟道和透射电子显微镜的组合，系统地研究在25-200 °C的温度范围内用500 keV Ar离子轰击的3C-SiC中损伤累积的剂量率依赖性。结果表明，一个显着的剂量率效应，其幅度增加接近线性与温度。当离子剂量和温度保持恒定时，损伤水平的剂量率依赖性是非线性的，在高剂量率下饱和。电子显微镜显示，稳定的缺陷团簇的平均尺寸随剂量率的增加而增加。这些发现对于理解和预测SiC的辐射损伤具有重要意义。
The influence of the defect generation rate on radiation damage processes in SiC remains poorly understood. Here, we use a combination of ion channeling and transmission electron microscopy to systematically study the dose-rate dependence of damage buildup in 3C-SiC bombarded in the temperature range of 25–200 °C with 500 keV Ar ions. The results reveal a pronounced dose-rate effect, whose magnitude increases close-to-linearly with temperature. When ion dose and temperature are held constant, the dose-rate dependence of the damage level is nonlinear, with saturation at high dose rates. Electron microscopy reveals that the average size of stable defect clusters increases with increasing dose rate. These findings have important implications for understanding and predicting radiation damage in SiC.