Characteristics of m-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition
Characteristics of m-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition
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DOI：
10.1143/jjap.49.080202
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发表时间：
2010-08
影响因子：
1.5
通讯作者：
K. Shimomoto;A. Kobayashi;K. Mitamura;K. Ueno;J. Ohta;M. Oshima;H. Fujioka
中科院分区：
文献类型：
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作者：
K. Shimomoto;A. Kobayashi;K. Mitamura;K. Ueno;J. Ohta;M. Oshima;H. Fujioka
我们通过使用脉冲激光沉积在低衬底温度下在 m 面 (1100) ZnO 衬底上生长单晶 m 面 (1100) InN 薄膜。 X 射线衍射和电子背散射衍射测量表明，纯 m 面 InN 在低于 300 °C 的衬底温度下生长。在室温 (RT) 下生长的 m 面 InN 的 X 射线摇摆曲线的半最大值全宽分别低至 0.12 和 0.12°，X 射线入射方向分别垂直于 [0001] 和 [1120]。掠入射X射线反射率测量表明，在300℃以上生长的样品中形成了厚度大于5 nm的界面层，而在室温下InN和ZnO之间没有形成界面层。通过将生长温度降低至室温来抑制界面反应可能是观察到的晶体质量改善的原因。
We have grown single-crystal m-plane (1100) InN films on m-plane (1100) ZnO substrates at low substrate temperatures by the use of pulsed laser deposition. X-ray diffraction and electron back-scattered diffraction measurements have revealed that pure m-plane InN grows at substrate temperatures below 300 °C. The full width at half maximum values of the X-ray rocking curves for m-plane InN grown at room temperature (RT) are as low as 0.12 and 0.12° with X-ray incidence directions normal to [0001] and [1120], respectively. Grazing-incidence X-ray reflectivity measurements have revealed that interfacial layers of greater than 5 nm in thickness are formed in the samples grown at temperatures above 300 °C, while no interfacial layers are formed between InN and ZnO at RT. The suppression of interfacial reactions by reducing the growth temperature down to RT is probably the reason for the improvements in crystalline quality that are observed.