Solution-processed vanadium oxide as an efficient hole injection layer for quantum-dot light-emitting diodes
Solution-processed vanadium oxide as an efficient hole injection layer for quantum-dot light-emitting diodes
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DOI：
10.1039/c6tc04050k
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发表时间：
2017-01-28
影响因子：
6.4
通讯作者：
Chen, Shuming
中科院分区：
文献类型：
--
作者：
Zhang, Heng;Wang, Siting;Chen, Shuming
PEDOT：PSS(PEDOT：PSS)由于其高电导率和高功函数，被广泛用作各种光电子器件的空穴注入层。然而，PEDOT：PSS的酸性和吸湿性不利于器件的长期稳定性。在这项工作中，我们开发了一种溶液处理的五氧化二钒(V2O5)作为PEDOT：PSS的替代品。通过旋涂三异丙氧钒溶液，然后在120℃下加热1分钟，可以很容易地获得Sol-Gel法制备V2O5。采用V2O5HIL，量子点发光二极管(QLED)的最大电流效率为10.91CDA(-1)，峰值EQE为7.25%，与传统的PEDOT：PSS HIL器件非常接近。此外，通过用无机V2O5取代有问题的PEDOT：PSS，QLED的稳定性/寿命大大提高。结果表明，溶胶-凝胶法制备的V2O5是一种有效替代PEDOT：PSS的高效、低成本、稳定的QLED器件。
PEDOT:PSS (polyethylene dioxythiophene: polystyrenesulfonate) is widely used as a hole injection layer (HIL) for various optoelectronic devices because of its high conductivity and high work-function. However, the acidic and hygroscopic nature of PEDOT: PSS are detrimental to the long-term stability of the devices. In this work, we develop a solution processed vanadium pentoxide (V2O5) as an alternative to the PEDOT: PSS. The sol-gel derived V2O5 is easily obtained by spin-coating the vanadium oxytriisopropoxide solution, followed by thermal annealing at 120 degrees C for 1 min. With the proposed V2O5 HIL, quantum dot light-emitting diodes (QLEDs) exhibit a maximum current efficiency of 10.91 cd A(-1) and a peak EQE of 7.25%, which are very close to those of devices with a conventional PEDOT: PSS HIL. Moreover, by substituting the problematic PEDOT: PSS with the inorganic V2O5, the stability/lifetime of the QLEDs is substantially improved. Our results demonstrate that the sol-gel derived V2O5 is an effective alternative to PEDOT: PSS for efficient, low cost and stable QLED devices.