Silicon Nitride Photonics for the Near-Infrared
Silicon Nitride Photonics for the Near-Infrared
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DOI：
10.1109/jstqe.2019.2934127
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发表时间：
2020-03-01
影响因子：
4.9
通讯作者：
Gardes, Frederic
中科院分区：
文献类型：
--
作者：
Bucio, Thalia Dominguez;Lacava, Cosimo;Gardes, Frederic
近年来，氮化硅（SiN）因其制造灵活性和有利的本征特性而在集成光子器件的实现中引起了人们的关注，这些特性可以定制以满足不同线性和非线性光子应用的要求。本文重点介绍我们在利用低温（< 350 摄氏度）SiN 平台演示近红外波长范围增强功能方面取得的进展。它讨论了复用（解）复用器件、非线性全光学转换、光子晶体结构、与新型相变材料的集成，并介绍了 2 μm 波长范围内的应用。
In recent years, silicon nitride (SiN) has drawn attention for the realisation of integrated photonic devices due to its fabrication flexibility and advantageous intrinsic properties that can be tailored to fulfill the requirements of different linear and non-linear photonic applications. This paper focuses on our progress in the demonstration of enhanced functionalities in the near infrared wavelength regime with our low temperature (< 350 degrees C) SiN platform. It discusses (de)multiplexing devices, nonlinear all optical conversion, photonic crystal structures, the integration with novel phase change materials, and introduces applications in the 2 mu m wavelength range.