Electrical and photoelectrical properties of P3HT/n-Si hybrid organic-inorganic heterojunction solar cells
Electrical and photoelectrical properties of P3HT/n-Si hybrid organic-inorganic heterojunction solar cells
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DOI:
10.1016/j.orgel.2013.07.021
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发表时间:
2013-11
影响因子:
3.2
通讯作者:
V. Brus;M. Zellmeier;X. Zhang;S. Greil;M. Gluba;A. J. Töfflinger;J. Rappich;N. Nickel
中科院分区:
文献类型:
--
作者:
V. Brus;M. Zellmeier;X. Zhang;S. Greil;M. Gluba;A. J. Töfflinger;J. Rappich;N. Nickel
A detail analysis of electrical and photoelectrical properties of hybrid organic–inorganic heterojunction solar cells poly(3-hexylthiophene) (P3HT)/n-Si, fabricated by spin-coating of the polymeric thin film onto oxide passivated Si(1 0 0) surface, was carried out within the temperature ranging from 283 to 333 K. The dominating current transport mechanisms were established to be the multistep tunnel-recombination and space charge limited current at forward bias and leakage current through the shunt resistance at reverse bias. A simple approach was developed and successfully applied for the correct analysis of the high frequencyC–Vcharacteristics of hybrid heterojunction solar cells. The P3HT/n-Si solar cell under investigation possessed the following photoelectric parameters:Jsc= 16.25 mA/cm2,Voc= 0.456 V,FF= 0.45,η= 3.32% at 100 mW/cm2AM 1.5 illumination. The light dependence of the current transport mechanisms through the P3HT/n-Si hybrid solar cells is presented quantitatively and discussed in detail.