Electrical and photoelectrical properties of P3HT/n-Si hybrid organic-inorganic heterojunction solar cells

Electrical and photoelectrical properties of P3HT/n-Si hybrid organic-inorganic heterojunction solar cells
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DOI:
10.1016/j.orgel.2013.07.021
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发表时间:
2013-11
影响因子:
3.2
通讯作者:
V. Brus;M. Zellmeier;X. Zhang;S. Greil;M. Gluba;A. J. Töfflinger;J. Rappich;N. Nickel
V. Brus;M. Zellmeier;X. Zhang;S. Greil;M. Gluba;A. J. Töfflinger;J. Rappich;N. Nickel
中科院分区:
工程技术3区
文献类型:
--
作者:
V. Brus;M. Zellmeier;X. Zhang;S. Greil;M. Gluba;A. J. Töfflinger;J. Rappich;N. Nickel

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在283 ~ 333 K温度范围内,对在氧化物钝化的Si(100)表面上旋涂聚合物薄膜制备的有机-无机杂化异质结太阳能电池聚3-己基噻吩(P3 HT)/n-Si进行了详细的电学和光电性能分析.主要的电流传输机制被建立为多步隧道复合和空间电荷限制的电流在正向偏压和漏电流通过分流电阻在反向偏压。本文发展了一种简单的方法,并成功地应用于混合异质结太阳电池高频C-V特性的正确分析。所研究的P3 HT/n-Si太阳能电池在100 mW/cm ~ 2 AM 1.5光照下具有以下光电参数:Jsc= 16.25 mA/cm ~ 2,Voc= 0.456 V,FF= 0.45,η= 3.32%。定量地给出并详细讨论了P3 HT/n-Si杂化太阳电池中电流传输机制的光依赖性。
A detail analysis of electrical and photoelectrical properties of hybrid organic–inorganic heterojunction solar cells poly(3-hexylthiophene) (P3HT)/n-Si, fabricated by spin-coating of the polymeric thin film onto oxide passivated Si(1 0 0) surface, was carried out within the temperature ranging from 283 to 333 K. The dominating current transport mechanisms were established to be the multistep tunnel-recombination and space charge limited current at forward bias and leakage current through the shunt resistance at reverse bias. A simple approach was developed and successfully applied for the correct analysis of the high frequencyC–Vcharacteristics of hybrid heterojunction solar cells. The P3HT/n-Si solar cell under investigation possessed the following photoelectric parameters:Jsc= 16.25 mA/cm2,Voc= 0.456 V,FF= 0.45,η= 3.32% at 100 mW/cm2AM 1.5 illumination. The light dependence of the current transport mechanisms through the P3HT/n-Si hybrid solar cells is presented quantitatively and discussed in detail.