Detailed analysis of surface recombination in crystalline silicon solar cells
Detailed analysis of surface recombination in crystalline silicon solar cells
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晶体硅太阳能电池表面复合的详细分析
DOI：
10.1109/irsec.2013.6529729
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
A. Belghachi
中科院分区：
文献类型：
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作者：
A. Belghachi
太阳能电池中的损耗是光伏设计师的主要关注点，最大限度地减少损耗是该领域所有工作人员的目标。光生电荷载流子在体相和表面的迁移是最主要的损耗机制。在这项工作中，表面复合效应的晶体硅太阳能电池，在正面和背面，进行了研究。对于典型的薄硅太阳电池（100μm），背面复合比正面复合更重要。这可以通过减少背面金属化覆盖或BSF层来处理，而正面复合可以通过表面钝化来减少。
Losses in solar cells are major concern for photovoltaic designers and minimizing them is the aim of all workers in this field. Recombination of photo generated charge carriers, both in the bulk and at surfaces, is the most prominent loss mechanism. In this work, surface recombination effect on crystalline silicon solar cells, both at the front and rear sides, is investigated. For typical thin silicon solar cell (100μm) the rear surface recombination is more important than the front. This could be treated by reducing rear surface metallization coverage or of a BSF layer while the front recombination could be reduced by surface passivation.