Application of the thermionic field emission model in the study of a Schottky barrier of Ni on p-GaN from current-voltage measurements -: art. no. 122109
Application of the thermionic field emission model in the study of a Schottky barrier of Ni on p-GaN from current-voltage measurements -: art. no. 122109
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DOI：
10.1063/1.1890476
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发表时间：
2005-03-21
影响因子：
4
通讯作者：
Lin, YJ
中科院分区：
文献类型：
--
作者：
Lin, YJ
通过电流-电压测量得到了Ni与掺镁p型GaN(p-GaN)接触的势垒高值。高掺镁引起的深能级缺陷带减小了p-GaN界面附近的耗尽层宽度，增加了热电子场发射几率。这也导致了正向偏置条件下电流的增加，这是不能用热离子发射模型来分析的。此外，利用热电子场发射模型计算的Ni与p-GaN接触的势垒高度与X射线光电子能谱测量得到的1.9 eV的值符合得很好。(C)2005年美国物理研究所。
Barrier height values of Ni contacts to Mg-doped p-type GaN (p-GaN) were obtained from current-voltage measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission. It also resulted in an increase in current flow under forward bias condition, which was not analyzed using the thermionic emission model. Further, the calculated barrier height value of Ni contacts to p-GaN using the thermionic field emission model is in good agreement with the value of 1.9 eV obtained from x-ray photoelectron spectroscopy measurements. (C) 2005 American Institute of Physics.