Optical properties of triplet states of excitons bound to interstitial-carbon interstitial-oxygen defects in silicon
Optical properties of triplet states of excitons bound to interstitial-carbon interstitial-oxygen defects in silicon
复制标题
硅中与间隙碳间隙氧缺陷结合的激子三重态的光学性质
DOI:
10.1103/physrevb.84.115204
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发表时间:
2011
影响因子:
3.7
通讯作者:
L.S.Vlasenko
中科院分区:
文献类型:
--
作者:
T.Ishikawa;K.Koga;T.Itahashi;K.M.Itoh;L.S.Vlasenko
Observation of photoluminescence from spin triplet states of excitons bound to interstitial carbon-oxygen complexes (C-O) in silicon is reported. New luminescence peak labeled as Cline emerges at the energybelow the well-known luminescence from the no-phonon transition of a C-Osinglet state situating at(C line). Observations of local vibrational modes associated with Cline and the temperature dependence of the relative intensity between Cand C lines lead to unambiguous identification of Cline as the no-phonon line from C-Odefects. In addition, the host silicon isotope shift of Cline is equal to that of C line, indicating that Cline is no-phonon luminescence as well. Furthermore, our photoluminescence measurements carried out in magnetic field show that Cline is associated with an isotropic spin triplet state due to quenching of orbital angular momentum of the hole composing the bound exciton.