Structural-order dependence of anomalous Hall effect in Co2MnGa topological semimetal thin films
Structural-order dependence of anomalous Hall effect in Co2MnGa topological semimetal thin films
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DOI：
10.1063/1.5127553
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发表时间：
2019-12
影响因子：
4
通讯作者：
Qiang Wang;Z. Wen;T. Kubota;T. Seki;K. Takanashi
中科院分区：
文献类型：
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作者：
Qiang Wang;Z. Wen;T. Kubota;T. Seki;K. Takanashi
本文报道了用溅射法制备的Co_2MnGa拓扑半金属外延薄膜的大反常霍尔效应及其与结构序的关系。通过调节薄膜生长温度，薄膜的结构顺序从B2系统地改变为L21。结果表明，当Co2MnGa薄膜中含有L21有序相时，AHE显著增强。在10 K时，获得了最大值为12.6%的反常霍尔角（300 K时为11%）。反常霍尔电导率对纵向电导率的依赖性表明，本征贡献在AHE中起着重要作用。因此，增强的AHE与L21秩序是由于在L21有序的Co2MnGa薄膜的拓扑电子结构的改善。这种情况下，也使我们能够解释的结构顺序依赖的magnetoresistance.We报告的大的反常霍尔效应（AHE）和它的结构顺序依赖的外延Co2MnGa拓扑半金属薄膜溅射法制备。在调节薄膜生长温度时，薄膜的结构顺序从B2系统地改变到L21。结果表明，当Co2MnGa薄膜中含有L21有序相时，AHE显著增强。在10 K时，获得了最大值为12.6%的反常霍尔角（300 K时为11%）。反常霍尔电导率对纵向电导率的依赖性表明，本征贡献在AHE中起着重要作用。因此，L21有序的AHE增强归因于L21有序Co2MnGa薄膜中拓扑电子结构的改善。这种情况也使我们能够解释的结构顺序依赖的磁阻。
We report on the large anomalous Hall effect (AHE) and its structural-order dependence for epitaxial Co2MnGa topological semimetal films fabricated by a sputtering method. The structural orders of the films were systematically changed from B2 to L21 upon tuning the film growth temperature. It was found that the AHE was dramatically enhanced when the Co2MnGa films contained the L21-ordered phase. A large anomalous Hall angle of ∼12.6% at 10 K (∼11% at 300 K) was achieved at maximum. The dependence of anomalous Hall conductivity on longitudinal conductivity suggests that the intrinsic contribution plays a major role in the AHE. Thus, the enhanced AHE with the L21 order is attributed to the improvement of topological electronic structures in the L21-ordered Co2MnGa films. This scenario also allows us to explain the structural-order dependence of magnetoresistance.We report on the large anomalous Hall effect (AHE) and its structural-order dependence for epitaxial Co2MnGa topological semimetal films fabricated by a sputtering method. The structural orders of the films were systematically changed from B2 to L21 upon tuning the film growth temperature. It was found that the AHE was dramatically enhanced when the Co2MnGa films contained the L21-ordered phase. A large anomalous Hall angle of ∼12.6% at 10 K (∼11% at 300 K) was achieved at maximum. The dependence of anomalous Hall conductivity on longitudinal conductivity suggests that the intrinsic contribution plays a major role in the AHE. Thus, the enhanced AHE with the L21 order is attributed to the improvement of topological electronic structures in the L21-ordered Co2MnGa films. This scenario also allows us to explain the structural-order dependence of magnetoresistance.