Four‐wave mixing in semi‐insulating InP and GaAs using the photorefractive effect
Four‐wave mixing in semi‐insulating InP and GaAs using the photorefractive effect
复制标题
利用光折变效应在半绝缘 InP 和 GaAs 中进行四波混频
DOI：
10.1063/1.94607
复制
发表时间：
1984
影响因子：
4
通讯作者：
A. Ballman
中科院分区：
文献类型：
--
作者：
A. Glass;A. Johnson;D. Olson;W. Simpson;A. Ballman
首次在半绝缘InPe：Fe和GaAsCr中观察到光折变效应。这些材料是敏感和通用的记录介质，用于使用毫瓦功率级的注入激光器在0.8-1.8-μm光谱区域进行高比特率并行光学处理。
The photorefractive effect has been observed for the first time in semi‐insulating InPe:Fe and GaAsCr. These materials are sensitive and versatile recording media for high bit rate parallel optical processing in the 0.8–1.8‐μm spectral region using injection lasers of milliwatt power levels.