Electron diffraction and microscopy studies of the structure of grain boundaries in silicon
Electron diffraction and microscopy studies of the structure of grain boundaries in silicon
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DOI：
10.1080/01418618108239420
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发表时间：
1981-02
影响因子：
1.6
通讯作者：
C. B. Carter;H. Föll;D. Ast;S. Sass
中科院分区：
文献类型：
--
作者：
C. B. Carter;H. Föll;D. Ast;S. Sass
由硅中扭曲晶界的周期结构所预期的衍射效应是通过对这些晶界的倒易晶格的检查来确定的。发展了一种分析方法来区分由于周期性边界结构而产生的真实衍射斑和由于双重衍射效应而产生的衍射斑。在硅双晶体中研究的边界的电子显微镜图像经常被发现是复杂的，并且包含莫尔条纹，这不能提供关于实际边界结构的信息。通过分析来自这些晶界的电子衍射图是否存在新的衍射点，可以证明所研究的所有Σ-1[001]，Σ-1[111]和Σ-3[111]扭曲晶界都具有周期性结构。
Abstract The diffraction effects expected from the periodic structure of twist boundaries in Si are determined by an examination of the reciprocal lattice of these boundaries. Methods of analysis are developed to distinguish between the real diffraction spots due to the periodic boundary structure and those due to double diffraction effects. The electron microscope images from the boundaries studied in Si bicrystals were frequently found to be complex and contained moire fringes which provided no information on the actual boundary structure. By analysing the electron diffraction patterns from these boundaries for the presence of new diffraction spots it is possible to show that all the Σ1 [001], Σ1 [111] and Σ3 [111] twist boundaries examined have a periodic structure.