Selective area epitaxy of GaAs films using patterned graphene on Ge
Selective area epitaxy of GaAs films using patterned graphene on Ge
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DOI：
10.1063/5.0078774
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发表时间：
2021-11
影响因子：
4
通讯作者：
Z. Lim;Sebastian Manzo;P. J. Strohbeen;V. Saraswat;M. Arnold;J. Kawasaki
中科院分区：
文献类型：
--
作者：
Z. Lim;Sebastian Manzo;P. J. Strohbeen;V. Saraswat;M. Arnold;J. Kawasaki
我们展示了在Ge（001）衬底上使用图案化的石墨烯掩模的GaAs薄膜的选择性区域外延。GaAs选择性地生长在Ge衬底的暴露区域上，石墨烯间距大至10微米。的选择性是高度依赖于生长温度和退火时间，我们解释的温度依赖的粘附系数和表面扩散。在几微米范围内的高成核选择性限制了远程外延的实验实现。
We demonstrate selective area epitaxy of GaAs films using patterned graphene masks on a Ge (001) substrate. The GaAs selectively grows on exposed regions of the Ge substrate, for graphene spacings as large as 10 microns. The selectivity is highly dependent on the growth temperature and annealing time, which we explain in terms of temperature dependent sticking coefficients and surface diffusion. The high nucleation selectivity over several microns sets constraints on experimental realizations of remote epitaxy.