Fabrication of carbon nanotube field-effect transistors in commercial silicon manufacturing facilities
Fabrication of carbon nanotube field-effect transistors in commercial silicon manufacturing facilities
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DOI：
10.1038/s41928-020-0419-7
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发表时间：
2020-06-01
影响因子：
34.3
通讯作者：
Shulaker, Max M.
中科院分区：
文献类型：
--
作者：
Bishop, Mindy D.;Hills, Gage;Shulaker, Max M.
碳纳米管场效应晶体管(CNFET)是发展节能计算的一种很有前途的纳米技术。尽管进展很快，但CNFET只在学术或研究实验室中制造。将这项技术转化为商业制造设施的一个关键挑战是开发一种合适的方法，在工业标准的大面积衬底上均匀沉积纳米管。这样的沉积方法需要是可制造的，与当今基于硅的技术兼容，并提供一种实现系统的途径，使系统具有比硅更高的能效优势。在这里，我们展示了一种将衬底浸入纳米管溶液中的沉积技术可以解决这些挑战，并可以在工业设施中制造CNFET。通过阐明纳米管沉积的驱动机制，我们对基于溶液的标准方法进行了工艺修改，显著提高了产量，将沉积过程加快了1100倍以上，同时降低了成本。这使我们能够在商业硅制造设施和大批量半导体铸造厂制造CNFET。我们使用目前用于制造硅产品晶片的相同设备，在行业标准200 mm晶片上展示了均匀且可重复的CNFET制造。使用基于溶液的沉积技术，碳纳米管场效应晶体管可以在商业硅制造设施和大批量商业铸造厂中制造，展示了在行业标准200 mm晶片上均匀且可重复的晶体管制造。
Carbon nanotube field-effect transistors (CNFETs) are a promising nanotechnology for the development of energy-efficient computing. Despite rapid progress, CNFETs have only been fabricated in academic or research laboratories. A critical challenge in transferring this technology to commercial manufacturing facilities is developing a suitable method for depositing nanotubes uniformly over industry-standard large-area substrates. Such a deposition method needs to be manufacturable, compatible with today's silicon-based technologies, and provide a path to achieving systems with energy efficiency benefits over silicon. Here, we show that a deposition technique in which the substrate is submerged within a nanotube solution can address these challenges and can allow CNFETs to be fabricated within industrial facilities. By elucidating the mechanisms driving nanotube deposition, we develop process modifications to standard solution-based methods that significantly improve throughput, accelerating the deposition process by more than 1,100 times, while simultaneously reducing cost. This allows us to fabricate CNFETs in a commercial silicon manufacturing facility and high-volume semiconductor foundry. We demonstrate uniform and reproducible CNFET fabrication across industry-standard 200 mm wafers, employing the same equipment currently being used to fabricate silicon product wafers.Using a solution-based deposition technique, carbon nanotube field-effect transistors can be fabricated in a commercial silicon manufacturing facility and a high-volume commercial foundry, demonstrating uniform and reproducible transistor fabrication across industry-standard 200 mm wafers.