DIELECTRIC STRENGTH OF THERMAL OXIDES ON 6H-SIC AND 4H-SIC
DIELECTRIC STRENGTH OF THERMAL OXIDES ON 6H-SIC AND 4H-SIC
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DOI：
10.1063/1.112904
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发表时间：
1994-09-26
影响因子：
4
通讯作者：
SCHORNER, R
中科院分区：
文献类型：
--
作者：
FRIEDRICHS, P;BURTE, EP;SCHORNER, R
本文报道了碳化硅热氧化形成的氧化层的介电强度。在6H-SiC和4H-SiC衬底的硅面上同质外延生长的碳化硅外延层在1100℃的干燥或潮湿环境中被氧化，使用金属氧化物-半导体电容器研究了其介电强度，发现当氧化层厚度在65 nm左右时，碳化硅外延层紧密结合到10 mV/cm，与碳化硅多型和衬底掺杂无关。考虑到预击穿区域的电流-电压特性，干式氧化物显示出优良的品质。Fowler-Nordheim隧穿是干态氧化物的限流机制。确定了这两种碳化硅多型体与热二氧化硅之间对应的势垒高度。
This work reports on the dielectric strength of oxide layers formed by thermal oxidation of silicon carbide (SiC). SiC epilayers grown homoepitaxially on the silicon face of 6H-SiC and 4H-SiC substrates were oxidized in dry or wet ambient at 1100 degrees C. The dielectric strength was investigated using metal-oxide-semiconductor capacitors and was found to be tightly bound to 10 MV/cm for oxide thicknesses around 65 nm and independent of the SiC polytype and substrate doping. Considering the current-voltage characteristics in the prebreakdown region, dry oxides exhibit superior quality. Fowler-Nordheim tunneling was identified as the limiting current mechanism in the dry oxides. The corresponding barrier heights between the two SiC polytypes and thermal silicon dioxide were determined.