Electrical and terahertz magnetospectroscopy studies of laser-patterned micro- and nanostructures on InAs-based heterostructures
Electrical and terahertz magnetospectroscopy studies of laser-patterned micro- and nanostructures on InAs-based heterostructures
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DOI：
10.1063/1.4907571
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发表时间：
2015-02-02
影响因子：
4
通讯作者：
Fischer, S. F.
中科院分区：
文献类型：
--
作者：
Chiatti, O.;Buchholz, S. S.;Fischer, S. F.
由具有强自旋轨道相互作用 (SOI) 的窄带隙半导体（例如 InAs）制成的纳米结构可用于过滤电子的动量模式，并提供完全通过电场产生和检测自旋极化电流的可能性。在这里，我们展示了对具有背栅的霍尔棒的磁输运和太赫兹磁谱研究，该霍尔棒由 InGaAs/InAlAs 量子阱结构制成，具有应变 4 nm InAs 插入通道。二维电子气深度为53nm，照射后载流子密度约为6 x 10(11) cm(-2)，迁移率约为2 x 10(5) cm(2)/Vs。低温和高磁场下的电学和太赫兹光传输测量表明，有效质量为 0.038m(0)，各向异性 g 因子高达 20，大于块状 InAs 或基于 InAs 的异质结构。我们证明了准一维通道可以通过微激光光刻形成。子带的数量由面内门控制。与之前的报道相反，施加到准一维通道的对称和非对称面内栅极电压没有显示出 SOI 引起的电导异常的迹象。 (C) 2015 AIP 出版有限责任公司。
Nanostructures fabricated from narrow-gap semiconductors with strong spin-orbit interaction (SOI), such as InAs, can be used to filter momentum modes of electrons and offer the possibility to create and detect spin-polarized currents entirely by electric fields. Here, we present magnetotransport and THz magnetospectroscopy investigations of Hall-bars with back-gates made from in InGaAs/InAlAs quantum well structures with a strained 4 nm InAs-inserted channel. The two-dimensional electron gas is at 53nm depth and has a carrier density of about 6 x 10(11) cm(-2) and mobility of about 2 x 10(5) cm(2)/Vs, after illumination. Electrical and THz optical transport measurements at low temperatures and in high magnetic fields reveal an effective mass of 0.038m(0) and an anisotropic g-factor of up to 20, larger than for bulk InAs or InAs-based heterostructures. We demonstrate that quasi-one-dimensional channels can be formed by micro-laser lithography. The population of subbands is controlled by in-plane gates. Contrary to previous reports, symmetric and asymmetric in-plane gate voltages applied to quasi-one dimensional channels did not show indications of SOI-induced anomalies in the conductance. (C) 2015 AIP Publishing LLC.