Controlled Growth of an Mo2CGraphene Hybrid Film as an Electrode in Self-Powered Two-Sided Mo2CGraphene/Sb2S0.42Se2.58/TiO2 Photodetectors
Controlled Growth of an Mo2CGraphene Hybrid Film as an Electrode in Self-Powered Two-Sided Mo2CGraphene/Sb2S0.42Se2.58/TiO2 Photodetectors
复制标题
Mo(2)C石墨烯混合薄膜作为自供电双面Mo(2)C石墨烯/Sb2S0.42Se2.58/TiO2光电探测器电极的受控生长
DOI：
10.3390/s19051099
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发表时间：
2019-03-01
期刊：
影响因子：
3.9
通讯作者：
Gao, Yihua
中科院分区：
文献类型：
--
作者：
Kang, Zhe;Zheng, Zhi;Gao, Yihua
石墨烯的单调功函数使得很难满足具有不同能带结构的每个器件的电极要求。二维（2D）过渡金属碳化物（TMC），例如MXene中的碳化物，被认为是作为石墨烯补充的电极的良好候选物。MXene中的碳化物已被用于制造锂电池等设备的电极。然而，通过化学蚀刻法合成的MXene中的碳化物的横向尺寸小和热不稳定性限制了其在光电器件中的应用。化学气相沉积（CVD）法为制备高质量的无官能团的碳纳米管提供了一条新的途径。然而，通过CVD方法制备的TMCs膜在生长过程中倾向于垂直生长，这不利于其在透明电极中的应用。为了解决上述问题，我们采用化学气相沉积法制备了Mo（2）Cgraphene（Mo（2）CGr）杂化薄膜. Mo（2）CGr的功函数介于石墨烯和纯Mo 2C膜的功函数之间。采用Mo（2）CGr杂化薄膜作为空穴传输层，制备了新型的Mo（2）CGr/Sb2S0.42Se2.58/TiO 2双面光电探测器。Mo（2）CGr/Sb2S0.42Se2.58/TiO 2/掺氟氧化锡（FTO）器件可以同时探测来自FTO和Mo（2）CGr侧的光。该器件具有较短的响应时间（0.084 ms）和恢复时间（0.100 ms）。该工作为制备Mo（2）C石墨烯杂化薄膜提供了一种有效的方法，并揭示了其在光电器件中的潜在应用.
The monotonic work function of graphene makes it difficult to meet the electrode requirements of every device with different band structures. Two-dimensional (2D) transition metal carbides (TMCs), such as carbides in MXene, are considered good candidates for electrodes as a complement to graphene. Carbides in MXene have been used to make electrodes for use in devices such as lithium batteries. However, the small lateral size and thermal instability of carbides in MXene, synthesized by the chemically etching method, limit its application in optoelectronic devices. The chemical vapor deposition (CVD) method provides a new way to obtain high-quality ultrathin TMCs without functional groups. However, the TMCs film prepared by the CVD method tends to grow vertically during the growth process, which is disadvantageous for its application in the transparent electrode. Herein, we prepared an ultrathin Mo(2)Cgraphene (Mo(2)CGr) hybrid film by CVD to solve the above problem. The work function of Mo(2)CGr is between that of graphene and a pure Mo2C film. The Mo(2)CGr hybrid film was selected as a transparent hole-transporting layer to fabricate novel Mo(2)CGr/Sb2S0.42Se2.58/TiO2 two-sided photodetectors. The Mo(2)CGr/Sb2S0.42Se2.58/TiO2/fluorine-doped tin oxide (FTO) device could detect light from both the FTO side and the Mo(2)CGr side. The device could realize a short response time (0.084 ms) and recovery time (0.100 ms). This work is believed to provide a powerful method for preparing Mo(2)Cgraphene hybrid films and reveals its potential applications in optoelectronic devices.