Distribution and Cross Sections of Fast States on Germanium Surfaces in Different Gaseous Ambients
Distribution and Cross Sections of Fast States on Germanium Surfaces in Different Gaseous Ambients
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DOI：
10.1103/physrev.107.404
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发表时间：
1957-07
期刊：
影响因子：
--
通讯作者：
A. Many;D. Gerlich
中科院分区：
文献类型：
--
作者：
A. Many;D. Gerlich
在固定的气体环境和温度下，在锗表面上进行表面复合速度和捕获的电荷密度的快速状态作为表面电位的函数的同时测量。表面电位的变化范围约为10千吨q的AC领域的应用程序垂直于表面。对于所研究的表面，在能量的分布的快态被发现由四个离散的水平集。这些集合中只有一个在复合过程中是重要的，其特征在于空穴和电子的相对高的捕获截面。另一组具有可忽略的横截面，并且仅出现在场效应数据中。剩下的两组能级位于所获得的表面电势范围之外，关于它们的性质几乎不能说。表面复合过程的详细研究表明，复合中心的能级是温度依赖性的，略有增加，随着温度的降低。场效应数据表明，这也是其他表面状态的情况。
Simultaneous measurements of surface recombination velocity and trapped charge density in the fast states as a function of surface potential are carried out on germanium surfaces at fixed gaseous ambients and temperatures. The surface potential is varied over a range of about 10 kT q by the application of ac fields normal to the surface. For the surfaces studied, the distribution in energy of the fast states is found to consist of four discrete sets of levels. Only one of these sets is significant in the recombination process, being characterized by relatively high capture cross sections for holes and electrons. Another set has negligible cross sections and appears only in the field-effect data. The two remaining sets of levels lie outside the range of surface potential attained and little can be said about their properties. Detailed investigation of the surface recombination process shows that the energy level of the recombination centers is temperature-dependent, increasing slightly as the temperature is decreased. The field-effect data indicate that such is also the case for the other surface states.