Single-ion implantation for solid state quantum computer development
Single-ion implantation for solid state quantum computer development
复制标题
用于固态量子计算机开发的单离子注入
DOI：
10.1117/12.460808
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发表时间：
2001
影响因子：
1.3
通讯作者：
D. Schneider
中科院分区：
文献类型：
--
作者：
T. Schenkel;J. Meijer;A. Persaud;J. Mcdonald;J. Holder;D. Schneider
几种固态量子计算机方案基于对固体基质中单个供体原子的电子和核自旋的操纵。量子位阵列的制造需要以纳米精度和高效率放置单个原子。在本文中，我们描述了低剂量、低能量注入的第一个结果，以及我们为 31Pq+ 离子开发的低能量（<10 keV）单离子注入方案。当 31Pq+ 离子撞击晶圆表面时，其势能（P15+ 为 9.3 keV）被释放，并发射大约 20 个二次电子。多个二次电子的发射允许以 100% 的效率检测每个离子撞击。目标上的光斑由光束聚焦和准直控制。恰好一个离子被注入到选定区域，避免了注入离子的泊松分布。
Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficiency. In this article we describe first results from low dose, low energy implantations and our development of a low energy (<10 keV), single ion implantation scheme for 31Pq+ ions. When 31Pq+ ions impinge on a wafer surface, their potential energy (9.3 keV for P15+) is released, and about 20 secondary electrons are emitted. The emission of multiple secondary electrons allows detection of each ion impact with 100% efficiency. The beam spot on target is controlled by beam focusing and collimation. Exactly one ion is implanted into a selected area avoiding a Poissonian distribution of implanted ions.