Spectroscopic Studies on Electroless Deposition of Copper on a Hydrogen-Terminated Si(111) Surface in Fluoride Solutions [Journal of The Electrochemical Society, 148, C421 (2001)]
Spectroscopic Studies on Electroless Deposition of Copper on a Hydrogen-Terminated Si(111) Surface in Fluoride Solutions [Journal of The Electrochemical Society, 148, C421 (2001)]
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DOI：
10.1149/1.1392336
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发表时间：
2001-06
影响因子：
3.9
通讯作者：
S. Ye;Taro Inchihara;K. Uosaki
中科院分区：
文献类型：
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作者：
S. Ye;Taro Inchihara;K. Uosaki
采用衰减全反射傅立叶变换红外 (ATR-FTIR) 光谱和 X 射线光电子能谱 (XPS) 研究了含铜离子 (Cu 2+ ) 的浓氟化铵 (NH 4 F) 和稀氢氟酸 (HF) 溶液中铜在氢封端 (H-)Si(111) 表面上的置换或化学沉积。当H-Si(111)样品浸入含有10 μM Cu 2+ 的40% NH 4 F溶液中时，ATR-FTIR显示一氢化物(SiH)减少，XPS显示铜沉积和Si氧化物形成以及H-Sill 1 1 1)表面上存在少量氟化Si物种。用超纯水冲洗表面后，SiH和Si氧化物的量分别减少和增加，而氟化Si物质消失。即使在不含Cu 2+ 的NH 4 F溶液中蚀刻后，在Si表面仍观察到铜和Si氧化物，表明Si氧化物在铜层下方生长。将H-Si(111)样品浸入含10 μM Cu 2+ 的0.5% HF溶液中。 SiH的含量减少，而二氢化物和三氢化物的含量显着增加，反映了Si(111)表面台阶和扭结密度的增加。含Cu 2 的稀HF溶液中H-Si(I I 1)表面沉积的铜量远小于含等量Cu 2+ 的NH 4 F溶液中沉积的铜量。浸入含10μM Cu 2+ 的稀HF溶液中后，H-Si(111)表面未观察到氧化物。
The cementation or electroless deposition of copper on a hydrogen-terminated (H-)Si( 111) surface in concentrated ammonium fluoride (NH 4 F) and dilute hydrofluoric acid (HF) solutions containging copper ion (Cu 2+ ) was investigated using attenuated total reflectance-Fourier transform infrared (ATR-FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS). When the H-Si(111) sample was immersed in a 40% NH 4 F solution containing 10 μM Cu 2+ , the ATR-FTIR showed a decrease in the monohydride (SiH), and XPS revealed the copper deposition and Si oxide formation as well as the existence of a small amount of fluorinated Si species on the H-Sill 1 1 1) surface. After the surface was rinsed with ultrapure water, the amounts of SiH and Si oxide decreased and increased, respectively, while the fluorinated Si species disappeared. Copper and Si oxide were observed on the Si surface even after being etched in a Cu 2+ -free NH 4 F solution, indicating that the Si oxide grew underneath the copper layer. When the H-Si(111) sample was immersed in a 0.5% HF solution containing 10 μM Cu 2+ . The amounts of SiH decreased while those of the dihydride and trihydride significantly inereased, reflecting the inerease in the densities of the steps and kinks on the Si(111) surface. The amount of copper deposited on the H-Si( I I 1) surface in the dilute HF solution containing Cu 2 was much less than that in the NH 4 F solution containing the same amount of Cu 2+ . The oxide was not observed on the H-Si(111) surface after being immersed in the dilute HF solution containing 10 μM Cu 2+ .