Contribution of the Sn 5s state to the SnS valence band: direct observation via ARPES measurements
Contribution of the Sn 5s state to the SnS valence band: direct observation via ARPES measurements
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DOI：
10.1088/2516-1075/ac6ea8
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发表时间：
2022-05
影响因子：
2.6
通讯作者：
Issei Suzuki;S. Kawanishi;Kiyohisa Tanaka;T. Omata;Shin–ichiro Tanaka
中科院分区：
文献类型：
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作者：
Issei Suzuki;S. Kawanishi;Kiyohisa Tanaka;T. Omata;Shin–ichiro Tanaka
硫化锡（SnS）是一种化合物半导体，已被研究用于广泛的应用，包括太阳能电池和热电材料。在这项研究中，SnS价带的电子结构，这是很重要的应用，通过角分辨光电子能谱与两个不同的激发能量在极紫外区（21和60 eV）进行了研究。Sn 5s态对SnS价带的贡献是通过利用Sn 5s态的横截面与极紫外区的其他态相比显著变化的事实来确定的。实验结果表明，Sn 5s态对价带顶（VBM）和第二VBM（VBM1）附近的k矢量有显著贡献.
Tin sulfide (SnS) is a compound semiconductor that has been studied for a wide range of applications, including solar cells and thermoelectric materials. In this study, the electronic structure of the SnS valence band, which is important for such applications, was investigated via angle-resolved photoelectron spectroscopy with two different excitation energies in the extreme ultraviolet region (21 and 60 eV). The contribution of the Sn 5s state to the SnS valence band was determined in relation to the k-vector by utilizing the fact that the cross section of Sn 5s state varies significantly compared to those of other states in the extreme ultraviolet region. The experimental results demonstrate that the Sn 5s state significantly contributed to the k-vector around the valence band maximum (VBM) and second VBM (VBM1).