Dielectric absorption of s-polarized infrared light resonant to longitudinal optical phonon energy incident on lateral (0 0 0 1) GaN/Ti stripe structures
Dielectric absorption of s-polarized infrared light resonant to longitudinal optical phonon energy incident on lateral (0 0 0 1) GaN/Ti stripe structures
复制标题
s 偏振红外光与入射到横向 (0 0 0 1) GaN/Ti 条带结构上的纵向光学声子能量共振的介电吸收
DOI：
10.1088/0022-3727/48/9/095103
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
B. Ma
中科院分区：
文献类型：
--
作者：
Y. Ishitani;Keisuke Hatta;K. Morita;B. Ma
从太赫兹（THz）应用的角度研究了半导体表面或界面与p偏振光的相互作用。在这项研究中，使用横向GaN/Ti条纹结构和s偏振光实现的约22 THz纵向光学（LO）声子共振能量处的电偶极吸收比之前报道的使用薄膜结构获得的弱信号更清晰和p-偏振光。先前提出的介电常数的功能是通过分析拉曼光谱，除了本样品结构的IR分析验证。在拉曼光谱中，在LO声子峰的较高能量侧发现一个额外的峰。横向GaN/Ti界面处的声子诱导电荷大于薄膜界面处的声子诱导电荷，导致LO声子能量附近的偶极矩更大，吸收更强。
The interaction of a semiconductor surface or interface and p-polarized infrared (IR) light has been investigated from the viewpoint of terahertz (THz) application. In this study the electric dipole absorption at the resonant energy to a longitudinal optical (LO) phonon of approximately 22 THz achieved using a lateral GaN/Ti stripe structure and s-polarized light, is clearer than the previously reported weak signal obtained using a film structure and p-polarized light. The previously proposed function of permittivity is validated by the analysis of Raman spectra in addition to IR analysis for the present sample structure. In the Raman spectra an additional peak is found at the higher-energy side of the LO phonon peak. The phonon-induced charges at the lateral GaN/Ti interface are greater than those at film interface, causing a greater dipole moment and stronger absorption in the vicinity of the LO phonon energy.
无掺杂GaAs/n型GaAs外延结构中相干纵向光学声子太赫兹辐射的增强机制
影响因子：
3.2
作者：
M. Nakayama;S. Asai;H. Takeuchi;O. Ichikawa;and M. Hata;Shuichi Tsuruta
通讯作者：
Shuichi Tsuruta
在施加偏压下量子阱结构中相干 LO 声子的增强太赫兹发射
DOI：
--
发表时间：
2009
期刊：
Appl. Phys. Lett. (in press)
影响因子：
--
作者：
T.Hasegawa;K.Mizoguchi;and M.Nakayama;Takayuki Hasegawa;Kohji Mizoguchi
通讯作者：
Kohji Mizoguchi