Supercurrent through InAs nanowires with highly transparent superconducting contacts
Supercurrent through InAs nanowires with highly transparent superconducting contacts
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DOI：
10.1088/0957-4484/22/44/445701
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发表时间：
2011-11
期刊：
影响因子：
3.5
通讯作者：
T. Nishio;T. Kozakai;S. Amaha;M. Larsson;H. Nilsson;H. Xu;Guoqiang Zhang;K. Tateno;H. Takayanagi;K. Ishibashi
中科院分区：
文献类型：
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作者：
T. Nishio;T. Kozakai;S. Amaha;M. Larsson;H. Nilsson;H. Xu;Guoqiang Zhang;K. Tateno;H. Takayanagi;K. Ishibashi
一维超导晶体管已被制造与个人的InAs纳米线（NW）使用射频溅射清洗，然后在原位金属沉积。由于InAs纳米线和金属之间形成的高度透明的接触，在微波辐射下观察到了超导、多次Andreev反射和Shapiro台阶。在夹断栅区附近，观察到法布里-珀罗干涉和具有共振特征的正常电导量子化，发现这与超电流流动相关。
One-dimensional superconducting transistors have been fabricated with individual InAs nanowires (NWs) using radio-frequency sputter cleaning followed by in situ metal deposition. Because of the highly transparent contacts formed in between the InAs NWs and the metals, supercurrent, multiple Andreev reflections and Shapiro steps under microwave radiation have been observed. Near pinch-off gate regions, Fabry–Perot interference and a normal conductance quantization with resonant features have been observed, which were found to be correlated with a supercurrent flow.