Poor electronic screening in lightly doped Mott insulators observed with scanning tunneling microscopy
Poor electronic screening in lightly doped Mott insulators observed with scanning tunneling microscopy
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DOI：
10.1103/physrevb.95.235141
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发表时间：
2017-06-23
影响因子：
3.7
通讯作者：
Allan, M. P.
中科院分区：
文献类型：
--
作者：
Battisti, I.;Fedoseev, V.;Allan, M. P.
通过扫描隧道显微镜 (STM) 在轻掺杂莫特绝缘体 (Sr1-x La-x)(2)IrO4 中测量的有效莫特间隙与光电子和光学实验报告的值有很大差异。在这里，我们证明这是由于该材料中尖端感应电场的电子屏蔽不良造成的。这种效应在半导体 STM 实验中众所周知，被称为尖端诱导能带弯曲 (TIBB)。我们证明这种现象也存在于轻掺杂莫特绝缘体 (Sr1-x La-x)(2)IrO4 中，并且在掺杂浓度为 x
The effective Mott gap measured by scanning tunneling microscopy (STM) in the lightly doped Mott insulator (Sr1-x La-x)(2)IrO4 differs greatly from values reported by photoemission and optical experiments. Here we show that this is a consequence of the poor electronic screening of the tip-induced electric field in this material. Such effects are well known from STM experiments on semiconductors and go under the name of tip-induced band bending (TIBB). We show that this phenomenon also exists in the lightly doped Mott insulator (Sr1-x La-x)(2)IrO4 and that, at doping concentrations of x