SIMPLE METHOD FOR CALCULATING EXCITON BINDING-ENERGIES IN QUANTUM-CONFINED SEMICONDUCTOR STRUCTURES
SIMPLE METHOD FOR CALCULATING EXCITON BINDING-ENERGIES IN QUANTUM-CONFINED SEMICONDUCTOR STRUCTURES
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DOI：
10.1103/physrevb.42.11774
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发表时间：
1990-12-15
影响因子：
3.7
通讯作者：
LITTLE, JW
中科院分区：
文献类型：
--
作者：
LEAVITT, RP;LITTLE, JW
本文提出了一种计算量子限制结构中激子结合能的简单、通用的方法。 结合能由规定函数的积分（在垂直于限制层的电子和空穴坐标上）给出，所述规定函数由电子和空穴子带包络函数的平方加权。 作为测试的方法，我们计算的结合能的重和轻空穴激子在矩形GaAs/Al 0.3Ga 0.7As量子阱作为阱宽的函数。 与以前的结果非常好的协议是在宽范围的量子阱宽度。 此外，我们还确定了GaAs/Al_（0.35）Ga_（0.65）As非对称耦合量子阱结构中重空穴激子的结合能随电场的变化。 我们的结果相比，在治疗中，其中通过电子-空穴库仑相互作用的电子子带的耦合被认为是有利的。 我们的方法应适用于各种复杂的量子限制的半导体结构，更严格的方法需要广泛的数值计算。
We present a simple, general method for calculating the binding energies of excitons in quantum-confined structures. The binding energy is given by an integral (over the electron and hole coordinates perpendicular to the confining layers) of a prescribed function weighted by the squares of the electron and hole subband envelope functions. As a test of the method, we calculate the binding energies for heavy- and light-hole excitons in a rectangular GaAs/Al0.3Ga0.7As quantum well as functions of the well width. Very good agreement with previous results is obtained over a wide range of quantum-well widths. Also, we determine the binding energies for heavy-hole excitons as functions of electric field in a GaAs/Al0.35Ga0.65As asymmetric coupled-quantum-well structure. Our results compare favorably with those obtained in a treatment in which coupling of the electron subbands via the electron-hole Coulomb interaction is considered. Our method should be applicable to a variety of complex quantum-confined semiconductor structures for which more rigorous approaches require extensive numerical calculations.