A novel SCR ESD protection structure with low-loading and latchup immunity for high-speed I/O pad

A novel SCR ESD protection structure with low-loading and latchup immunity for high-speed I/O pad
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DOI：
10.1109/vtsa.2003.1252557
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发表时间：
2003-10
期刊：
2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672)
影响因子：
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通讯作者：
C.S. Lai;Meng-Hwang Liu;S. Su;Tao-Cheng Lu
C.S. Lai;Meng-Hwang Liu;S. Su;Tao-Cheng Lu
中科院分区：
其他
文献类型：
--
作者：
C.S. Lai;Meng-Hwang Liu;S. Su;Tao-Cheng Lu

文献摘要

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A novel SCR device "Latchup-free gate-couple LVTPSCR (LFGCPSCR)" has been proposed to act as an efficient ESD protection device with low loading effect. With the proper control circuit, the trigger voltage under normal operation can be high up to 14V, providing excellent immunity to Latchup. Under ESD events, this novel SCR device could trigger fast and provide an effective discharging path for ESD.