The physical mechanism investigation of AC TDDB behavior in advanced gate stack
The physical mechanism investigation of AC TDDB behavior in advanced gate stack
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先进栅堆叠中 AC TDDB 行为的物理机制研究
DOI：
10.1109/irps.2014.6860667
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
K. Wu
中科院分区：
文献类型：
--
作者：
C. L. Chen;S. W. Chang;S. C. Chen;Y. Lee;Y. Lee;D. Huang;J. Shih;K. Wu
首次研究了AC-TDDB改善和降解的物理机理。对于优化的栅堆栈，AC TDDB的改进是由于更多的电荷去陷阱。对于非优化栅堆叠，AC TDDB退化可以用电荷再分布和电荷恢复相结合的模型来解释。此外，快速测量可以提供更可靠的TDDB寿命预测，因为在TDDB应力过程中电荷捕获和去陷阱效应被最小化。
For the first time, the physical mechanisms for both AC TDDB improvement and degradation are investigated. For an optimized gate stack, the AC TDDB improvement is due to more charge de-trapping. For a non-optimized gate stack, the AC TDDB degradation can be explained through a proposed model which combines the charge redistribution and charge recovery. In addition, the fast measurement could provide a more reliable TDDB lifetime projection due to the minimization of the charge trapping and de-trapping effects during the TDDB stress.