Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
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DOI：
10.1088/1674-4926/35/12/124003
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发表时间：
2014-12
影响因子：
5.1
通讯作者：
Chongbiao Luan;Zhaojun Lin;Yuanjie Lv;L. Meng;Yingxia Yu;Zhifang Cao;Hong Chen;Zhanguo Wang
中科院分区：
文献类型：
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作者：
Chongbiao Luan;Zhaojun Lin;Yuanjie Lv;L. Meng;Yingxia Yu;Zhifang Cao;Hong Chen;Zhanguo Wang
通过对具有侧面欧姆接触的矩形AlN/GaN异质结场效应晶体管（HFET）的电容-电压和电流-电压特性的测量，发现侧面欧姆接触处理后AlN/GaN HFET中的极化库仑场散射大大减弱，但仍不能忽略。研究还发现，在侧面欧姆接触下，AlN/GaN HFET的极化库仑场散射比AlGaN/AlN/GaN和In0.17Al0.83N/AlN/GaN HFET强得多，这归因于AlN/GaN异质结构的极薄势垒层和更强的极化。
Using the measured capacitance—voltage and current—voltage characteristics of the rectangular AlN/GaN heterostructure field-effect transistors (HFETs) with the side-Ohmic contacts, it was found that the polarization Coulomb field scattering in the AlN/GaN HFETs was greatly weakened after the side-Ohmic contact processing, however, it still could not be ignored. It was also found that, with side-Ohmic contacts, the polarization Coulomb field scattering was much stronger in AlN/GaN HFETs than in AlGaN/AlN/GaN and In0.17Al0.83N/AlN/GaN HFETs, which was attributed to the extremely thinner barrier layer and the stronger polarization of the AlN/GaN heterostructure.