Electrical manipulation of the magnetic order in antiferromagnetic PtMn pillars
Electrical manipulation of the magnetic order in antiferromagnetic PtMn pillars
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DOI：
10.1038/s41928-020-0367-2
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发表时间：
2020-02-10
影响因子：
34.3
通讯作者：
Amiri, Pedram Khalili
中科院分区：
文献类型：
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作者：
Shi, Jiacheng;Lopez-Dominguez, Victor;Amiri, Pedram Khalili
反铁磁体是没有宏观磁化的磁性有序材料。因此，它们可以用于存储设备的开发，因为数据不能被外部磁场擦除。然而，这也使得难以电控制它们的磁序（Neel矢量）。在这里，我们表明，支柱的反铁磁PtMn，这是生长在重金属层和直径下降到800纳米，可以可逆地切换不同的磁状态之间的电流。这些器件基于磁存储器行业中通常使用的材料，我们观察到电流密度降低到类似于2 MA cm（-2）。此外，通过改变写入电流的幅度，可以实现多级存储器特性。微磁学模拟表明，不同的磁状态可能由具有涡旋和反涡旋纹理的畴壁分隔的畴组成，这些畴壁响应于电流而移动，从而修改平均Neel矢量。生长在重金属层上的反铁磁PtMn柱可以通过电流在不同的磁状态之间可逆地切换，其说明硅兼容反铁磁材料在存储器和计算装置的开发中的潜力。
Antiferromagnets are magnetically ordered materials without a macroscopic magnetization. As a result, they could be of use in the development of memory devices because data cannot be erased by external magnetic fields. However, this also makes it difficult to electrically control their magnetic order (Neel vector). Here, we show that pillars of antiferromagnetic PtMn, which are grown on a heavy-metal layer and have diameters down to 800 nm, can be reversibly switched between different magnetic states by electric currents. The devices are based on materials that are typically used in the magnetic memory industry, and we observe switching down to a current density of similar to 2 MA cm(-2). Furthermore, by varying the amplitude of the writing current, multilevel memory characteristics can be achieved. Micromagnetic simulations suggest that the different magnetic states may consist of domains separated by domain walls with vortex and anti-vortex textures that move in response to current, modifying the average Neel vector.Pillars of antiferromagnetic PtMn, grown on a heavy-metal layer, can be reversibly switched between different magnetic states by electric currents, illustrating the potential of silicon-compatible antiferromagnetic materials in the development of memory and computing devices.