Tailoring spin defects in diamond by lattice charging.

Tailoring spin defects in diamond by lattice charging.
复制标题

DOI:
10.1038/ncomms15409
复制
发表时间:
2017-05-17
影响因子:
16.6
通讯作者:
Wrachtrup J
Wrachtrup J
中科院分区:
综合性期刊1区
文献类型:
--
作者:
Fávaro de Oliveira F;Antonov D;Wang Y;Neumann P;Momenzadeh SA;Häußermann T;Pasquarelli A;Denisenko A;Wrachtrup J

文献摘要

被引文献

相似文献

固体中原子大小的自旋缺陷是独特的量子系统。大多数应用需要纳米级定位精度,这通常通过低能离子注入来实现。该技术的一个缺点是显着的残余晶格损伤,这降低了量子应用中自旋的性能。在这里,我们表明注入引起的缺陷的电荷状态极大地影响热退火过程中晶格缺陷的形成。例如,氮注入位点处的空位充电抑制了空位复合物的形成,从而使金刚石中的自旋相干时间提高了十倍,并使氮空位中心的形成产率提高了两倍。这是通过将注入缺陷限制在掺硼金刚石结构产生的自由载流子的空间电荷层中来实现的。通过将这些结果与数值计算相结合,我们对注入的自旋缺陷的形成和动力学有了定量的了解。这些结果可以改进使用固态系统的量子器件的工程设计。离子注入用于在固体中引入自旋缺陷,但会造成残余晶格损伤,从而降低性能。在这里,作者证明了感应缺陷的电荷状态会影响这种损伤,并且电荷空位会导致相干时间和中心产率的改善。
Atomic-size spin defects in solids are unique quantum systems. Most applications require nanometre positioning accuracy, which is typically achieved by low-energy ion implantation. A drawback of this technique is the significant residual lattice damage, which degrades the performance of spins in quantum applications. Here we show that the charge state of implantation-induced defects drastically influences the formation of lattice defects during thermal annealing. Charging of vacancies at, for example, nitrogen implantation sites suppresses the formation of vacancy complexes, resulting in tenfold-improved spin coherence times and twofold-improved formation yield of nitrogen-vacancy centres in diamond. This is achieved by confining implantation defects into the space-charge layer of free carriers generated by a boron-doped diamond structure. By combining these results with numerical calculations, we arrive at a quantitative understanding of the formation and dynamics of the implanted spin defects. These results could improve engineering of quantum devices using solid-state systems. Ion implantation is used to introduce spin defects in solids, but it inflicts residual lattice damage, degrading performances. Here the authors demonstrate that the charge state of induced defects influences such damage, and that charging vacancies leads to improved coherence times and yield of centres.