Transfer mold field emitter arrays by intrinsic sharpening
Transfer mold field emitter arrays by intrinsic sharpening
复制标题
通过内在锐化传递模场发射器阵列
DOI：
10.1109/ivmc.1995.487021
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
Y. Nakamura
中科院分区：
文献类型：
--
作者：
M. Nakamoto;K. Ichimura;T. Ono;Y. Nakamura
利用传递模射极制造方法中的本征锐化技术，研制出了尖锐、均匀、低工作电压的场射极阵列，实现了器件的高效率和高可靠性。当热氧化SiO/ sub2 /绝缘子层厚度从0.1 /spl mu/m增加到0.7 /spl mu/m时，由于尖端的锐化作用，发射极尖端角从60/spl°/减小到25/spl°/。经过90分钟的热氧化后，发射极尖端的长径比是初始长径比的三倍。这种锐化技术不会对发射体造成损伤，并且具有纳米级的锐度、优异的场发射阵列均匀性、高的发射极电阻和易于选择发射极材料等优点。
Sharp, uniform and low operation voltage field emitter arrays have been developed by an intrinsic sharpening technique in the transfer mold emitter fabrication method to realize high efficiency and high reliability devices. As thermally oxidized SiO/sub 2/ insulator layer thickness is increased from 0.1 /spl mu/m to 0.7 /spl mu/m, the emitter tip angle is decreased from 60/spl deg/ to 25/spl deg/, because of the sharpening effect on the tips. After 90 minutes of thermal oxidation, the emitter tip aspect ratio is three times as high as the initial aspect ratio. This sharpening technique produces no damage to the emitters and provides nanometer-sharpness, superior uniformity of field emitter arrays, high emitter-to-gate resistance, and easiness of selecting emitter materials.