Quantized Conductance in InGaAs Point Contacts at High Temperatures
Quantized Conductance in InGaAs Point Contacts at High Temperatures
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高温下 InGaAs 点接触的量子化电导
DOI：
10.1143/jjap.33.l800
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发表时间：
1994
影响因子：
1.5
通讯作者：
Seigo Tarucha Seigo Tarucha
中科院分区：
文献类型：
--
作者：
T. Bever;Yoshiro Hirayama Yoshiro Hirayama;Seigo Tarucha Seigo Tarucha
我们采用聚焦离子束绝缘写入技术在InGaAs/InAlAs异质结构的二维电子气中制备量子点接触。电导作为相邻面内栅上电压的函数，在高达60 K的温度下呈现台阶。从温度和源漏电压和磁场依赖的电导步骤，我们估计的一维子带间距为15毫电子伏。
We used focused ion beam insulation writing to fabricate quantum point contacts in the two-dimensional electron gas of an InGaAs/InAlAs heterostructure. The conductance as a function of voltage on an adjacent in-plane gate exhibited steps for temperatures up to 60 K. From the temperature and source-drain voltage and magnetic field dependence of the conductance steps, we estimated the one-dimensional subband spacing to be 15 meV.