LaNiO3 films with tunable out‐of‐plane lattice parameter and their strain‐related electrical properties
LaNiO3 films with tunable out‐of‐plane lattice parameter and their strain‐related electrical properties
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DOI：
10.1002/pssa.201431695
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发表时间：
2015-09
期刊：
影响因子：
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通讯作者：
Haoming Wei;Marcus Jenderka;M. Grundmann;M. Lorenz
中科院分区：
文献类型：
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作者：
Haoming Wei;Marcus Jenderka;M. Grundmann;M. Lorenz
采用脉冲激光沉积法制备了LaNiO 3（LNO）薄膜。C轴，即，通过使用不同的衬底材料以及通过改变氧分压和生长温度，可重复地控制膜的面外晶格参数。随着氧压的增加，沉积在LaAlO 3上的LNO的面外（c轴）应变从正变为负。所有的薄膜都表现出良好的金属导电性，具有正的电阻率温度系数。最低电阻率约为300 µΩ cm。在高温和低温下，电阻率分别由电子-声子散射和电子-电子相互作用解释。此外，电阻率显示出对LNO膜的c轴应变的明显依赖性。随着应变的增加，电阻率增加。然而，这种效应对于负c轴应变更为明显。
LaNiO3 (LNO) thin films were grown using pulsed laser deposition. The c‐axis, i.e., out‐of‐plane lattice parameter of the films was controlled reproducibly by using different substrate materials and by variation of oxygen partial pressure and growth temperature. The out‐of‐plane (c‐axis) strain of LNO deposited on LaAlO3 with increasing oxygen pressure changed from positive to negative. All the films show an excellent metallic conductivity with positive resistivity temperature coefficient. Lowest resistivity was about 300 µΩ cm. At high and low temperatures, the resistivity is explained by electron–phonon scattering and electron–electron interaction, respectively. In addition, the resistivity shows a clear dependence on the c‐axis strain of LNO films. With increasing strain, the resistivity increases. However, this effect is much more pronounced for negative c‐axis strain.