A high thermoelectric figure of merit ZT > 1 in Ba heavily doped BiCuSeO oxyselenides
A high thermoelectric figure of merit ZT > 1 in Ba heavily doped BiCuSeO oxyselenides
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Ba 重掺杂 BiCuSeO 氧硒化物中的高热电品质因数 ZT > 1
DOI：
10.1039/c2ee22622g
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发表时间：
2012-09-01
影响因子：
32.5
通讯作者：
Zhao, Li-Dong
中科院分区：
文献类型：
--
作者：
Li, Jing;Sui, Jiehe;Zhao, Li-Dong
BiCuSeO系统在923 K下的高ZT值接近1.1，这是通过重掺杂Ba和细化晶粒尺寸（200-400 nm）实现的，其高于任何热电氧化物。优异的热稳定性和化学稳定性高达923 K和高热电性能证实了BiCuSeO系统是有前途的热电发电应用。
A high ZT value of similar to 1.1 at 923 K in the BiCuSeO system is achieved via heavily doping with Ba and refining grain sizes (200-400 nm), which is higher than any thermoelectric oxide. Excellent thermal and chemical stabilities up to 923 K and high thermoelectric performance confirm that the BiCuSeO system is promising for thermoelectric power generation applications.