Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
复制标题
N2O中Si快速热氧化制备超薄氮氧化物栅介质的电学特性
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
Jack C. Lee
中科院分区：
文献类型：
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作者：
H. Hwang;W. Ting;B. Maiti;D. Kwong;Jack C. Lee
这封信介绍了一种使用 N2O（一氧化二氮）气体生长高质量超薄 (∼60 A) 栅极电介质的独特工艺。与氧气中传统的快速热生长氧化物相比，新型氮氧化物电介质表现出非常大的电荷击穿电压（+50 mA/cm2，氮氧化物为 850°C/cm2，而控制热氧化物为 95 C/cm2），并且在恒定电流应力下俘获电荷较少。在恒定电流应力和 X 射线辐射下也观察到界面态生成显着减少。二次离子质谱深度剖面表明 Si/SiO2 界面处存在富氮层，这可以解释氮氧化物电介质完整性的改善。
This letter presents a unique process to grow high quality ultrathin (∼60 A) gate dielectrics using N2O (nitrous oxide) gas. Compared with conventional rapid thermally grown oxide in the O2, the new oxynitride dielectrics show very large charge‐to‐breakdown (at +50 mA/cm2, 850 C/cm2 for oxynitride compared to 95 C/cm2 for the control thermal oxide) and less charge trapping under constant current stress. Significantly reduced interface state generation was also observed under constant current stress and x‐ray radiation. A secondary‐ion mass spectroscopy depth profile indicates a nitrogen‐rich layer at the Si/SiO2 interface, which can explain the improved integrity of oxynitride dielectric.