Epitaxial strain induced metal insulator transition in La0.9Sr0.1MnO3 and La0.88Sr0.1MnO3 thin films
Epitaxial strain induced metal insulator transition in La0.9Sr0.1MnO3 and La0.88Sr0.1MnO3 thin films
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DOI：
10.1063/1.125687
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发表时间：
2000
影响因子：
4
通讯作者：
F. Razavi;G. Gross;H. Habermeier;O. Lebedev;S. Amelinckx;G. Tendeloo;A. Vigliante
中科院分区：
文献类型：
--
作者：
F. Razavi;G. Gross;H. Habermeier;O. Lebedev;S. Amelinckx;G. Tendeloo;A. Vigliante
我们报告了一个意想不到的金属绝缘体转变的铁磁相变温度为薄膜的La0.9Sr0.1MnO3（50 nm），类似于单晶，没有这样的转变是观察到低于TC。此外，我们观察到的功能抑制与故意La不足的薄膜La0.88Sr0.1MnO3（<75 nm）的电荷或轨道有序。在薄膜中，透射电子显微镜揭示了由于外延生长的压缩应变，即晶格参数采用SrTiO 3的立方晶格的那些。随着薄膜厚度的增加，在薄膜中观察到共格的微孪晶，并且薄膜弛豫为正交结构。
We are reporting an unexpected metal insulator transition at the ferromagnetic phase-transition temperature for thin films of La0.9Sr0.1MnO3 ( 50 nm), similar to the single crystal, no such transition is observed below TC. Additionally, we observe the suppression of the features associated with charge or orbital ordering in intentionally La-deficient thin films of La0.88Sr0.1MnO3 (<75 nm). In thin films, transmission electron microscopy reveals a compressive strain due to the epitaxial growth, that is, lattice parameters adopt those of the cubic lattice of SrTiO3. As the film thickness increases, coherent microtwinning is observed in the films and the films relax to a orthorhombic structure.