Investigation on Effect of Doped InP Subchannel Thickness and Delta-Doped InP Layer of Composite Channel HEMT
Investigation on Effect of Doped InP Subchannel Thickness and Delta-Doped InP Layer of Composite Channel HEMT
复制标题
复合沟道HEMT掺杂InP子沟道厚度和Delta掺杂InP层的影响研究
DOI：
10.1109/ted.2022.3144118
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发表时间：
2022
影响因子：
3.1
通讯作者：
Yi Hao
中科院分区：
文献类型：
--
作者：
Yao Chen;Lin;Hang;Yuchen Liu;Zhi Jin;Yongbo Su;Yi Hao
DC performances of a depletion-mode 100-nm In0.53Ga0.47As/InP composite channel InP-based high-electron-mobility transistor (HEMT) is investigated by using numerical simulation. The transfer, output, and breakdown characteristics of different doped InP subchannel thickness In0.53Ga0.47As/InP composite channel HEMT are compared. Decreasing the thickness of the doped InP subchannel from 10 to 5 nm results in a decline of the output current. However, the threshold voltage is increased from −0.77 to −0.6 V and the breakdown voltage is improved from 1.99 to 5.69 V at bias of ${V}_{{\mathrm {gs}}}-{V}_{{\mathrm {t}}} = -0.5$ V. To enhance the breakdown characteristic of In0.53Ga0.47As/InP composite channel HEMT, we minimize the thickness of the doped InP layer and replace the doped InP layer with the delta-doped layer. The structure is compared with the conventional double delta-doped structure in the performance of transfer, output, and breakdown characteristics. At ON-state, the electrons of two kinds of structure concentrate in the InGaAs channel. The output current and the threshold voltage of the composite channel structure are at the same level compared with the conventional double delta-doped structure. However, at OFF-state, because of the transfer of electrons into the InP subchannel, part of electric potential will not be concentrated at the drain side of the gate region but distributed in other area of the channel. A higher drain voltage is required to achieve electric field strength enough to breakdown and the breakdown voltage is improved obviously.
